International Rectifier
IRF5210S
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Current Rating-40A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5210S technical specifications.
General
| Continuous Drain Current (ID) | 40A |
| Current Rating | -40A |
| Drain to Source Breakdown Voltage | -100V |
| Fall Time | 81ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Bulk |
| RoHS Compliant | No |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF5210S Datasheet
Download the complete datasheet for International Rectifier IRF5210S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.