International Rectifier
IRF5210SPBF
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power3.1W
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Technical Specifications
International Rectifier IRF5210SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.69mm |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Power Dissipation | 3.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5210SPBF Datasheet
Download the complete datasheet for International Rectifier IRF5210SPBF to view detailed technical specifications.
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