P-channel power MOSFET featuring a 100V drain-source voltage and 38A continuous drain current. Achieves a low 60mΩ maximum drain-source on-resistance. Designed for surface mounting in a TO-263 package, this silicon metal-oxide semiconductor FET offers fast switching with a 14ns turn-on delay and 55ns fall time. Maximum power dissipation is 3.8W, with an operating temperature range of -55°C to 150°C.
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5210STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
38A
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
100V
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
2.78nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
-4V
Turn-Off Delay Time
72ns
Turn-On Delay Time
14ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5210STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF5210STRLPBF to view detailed technical specifications.
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