P-channel power MOSFET featuring a 100V drain-source voltage and 38A continuous drain current. Achieves a low 60mΩ maximum drain-source on-resistance. Designed for surface mounting in a TO-263 package, this silicon metal-oxide semiconductor FET offers fast switching with a 14ns turn-on delay and 55ns fall time. Maximum power dissipation is 3.8W, with an operating temperature range of -55°C to 150°C.
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5210STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain-source On Resistance-Max | 60mR |
| Dual Supply Voltage | 100V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 14ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5210STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF5210STRLPBF to view detailed technical specifications.
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