IRF5210STRR

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF5210STRR technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

40A

Drain to Source Voltage (Vdss)

100V

Input Capacitance

2.7nF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

60mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.