International Rectifier
IRF5210STRRPBF
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5210STRRPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60MR |
| Input Capacitance | 2.78nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5210STRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5210STRRPBF to view detailed technical specifications.
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