P-channel power MOSFET with 55V drain-source voltage and 31A continuous drain current. Features 0.06 ohm maximum drain-source on-resistance and 110W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220AB through-hole package. Operating temperature range is -55°C to 175°C.
PackageTO-220AB
Current Rating-31A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF5305PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
31A
Current Rating
-31A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
60mR
Dual Supply Voltage
-55V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Nominal Vgs
-4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
39ns
Turn-On Delay Time
14ns
DC Rated Voltage
-55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5305PBF Datasheet
Download the complete datasheet for International Rectifier IRF5305PBF to view detailed technical specifications.
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