International Rectifier
IRF5305S
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRF5305S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
31A
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
3.8W
Rds On Max
60mR
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF5305S Datasheet
Download the complete datasheet for International Rectifier IRF5305S to view detailed technical specifications.
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