P-channel power MOSFET with a continuous drain current of -31A and a drain-to-source voltage of -55V. Features a low on-resistance of 60mΩ at a nominal gate-source voltage of -4V. This silicon, metal-oxide semiconductor FET is housed in a D2PAK-3 (TO-263) surface-mount package, offering a maximum power dissipation of 110W and operating temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 14ns and turn-off delay time of 39ns.
PackageTO-263
Current Rating-31A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF5305STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | -31A |
| Current Rating | -31A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 60mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -55V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5305STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF5305STRLPBF to view detailed technical specifications.
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