IRF5305STRLPBF

P-channel power MOSFET with a continuous drain current of -31A and a drain-to-source voltage of -55V. Features a low on-resistance of 60mΩ at a nominal gate-source voltage of -4V. This silicon, metal-oxide semiconductor FET is housed in a D2PAK-3 (TO-263) surface-mount package, offering a maximum power dissipation of 110W and operating temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 14ns and turn-off delay time of 39ns.