N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 90mΩ at a nominal gate-source voltage of 4V. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 3.8W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 35ns turn-off delay, with a fall time of 25ns.
PackageTO-262
Current Rating17A
MountingThrough Hole
Power3.8W
Quick Jump:
Technical Specifications
International Rectifier IRF530NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
920pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
35ns
Turn-On Delay Time
9.2ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF530NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
