N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 90mΩ at a nominal gate-source voltage of 4V. Designed for through-hole mounting in a TO-262 package, it boasts a maximum power dissipation of 3.8W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 35ns turn-off delay, with a fall time of 25ns.
PackageTO-262
Current Rating17A
MountingThrough Hole
Power3.8W
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Technical Specifications
International Rectifier IRF530NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF530NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NLPBF to view detailed technical specifications.
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