N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss) and 17A Continuous Drain Current (ID). Features 0.09 ohm maximum drain-source on-resistance and 3.8W power dissipation. This silicon metal-oxide semiconductor FET is housed in a D2PAK package for surface mounting. Includes 920pF input capacitance and 4V gate threshold voltage. Operates from -55°C to 175°C.
PackageD2PAK
Current Rating17A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF530NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
90MR
Dual Supply Voltage
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
920pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.8W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
9.2ns
DC Rated Voltage
100V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF530NSPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NSPBF to view detailed technical specifications.
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