N-Channel Power MOSFET, 100V Drain-Source Voltage, 17A Continuous Drain Current, and 90mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 70W max power dissipation, and operates from -55°C to 175°C. It includes a 9.2ns turn-on delay and 35ns turn-off delay, with 920pF input capacitance. RoHS compliant and lead-free.
PackageD2PAK
Current Rating17A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF530NSTRLPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
90MR
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
920pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
35ns
Turn-On Delay Time
9.2ns
DC Rated Voltage
100V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF530NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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