N-Channel Power MOSFET, 100V Drain-Source Voltage, 17A Continuous Drain Current, and 90mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 70W max power dissipation, and operates from -55°C to 175°C. It includes a 9.2ns turn-on delay and 35ns turn-off delay, with 920pF input capacitance. RoHS compliant and lead-free.
PackageD2PAK
Current Rating17A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF530NSTRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 90MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF530NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF530NSTRLPBF to view detailed technical specifications.
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