International Rectifier
IRF540N
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
Power130W
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Technical Specifications
International Rectifier IRF540N technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
33A
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
Power Dissipation
130W
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF540N Datasheet
Download the complete datasheet for International Rectifier IRF540N to view detailed technical specifications.
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