International Rectifier
IRF540NLPBF
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
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Technical Specifications
International Rectifier IRF540NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 44MR |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF540NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF540NLPBF to view detailed technical specifications.
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