N-Channel Power MOSFET, 100V Drain-Source Voltage, 33A Continuous Drain Current, and 0.044ohm Max On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK package for surface mounting, a maximum power dissipation of 110W, and operates within a temperature range of -55°C to 175°C. It offers fast switching with a 11ns turn-on delay and 39ns turn-off delay, and is RoHS compliant.
PackageD2PAK
Current Rating33A
MountingSurface Mount
Power130W
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Technical Specifications
International Rectifier IRF540NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 44MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Rds On Max | 8.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF540NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF540NSTRRPBF to view detailed technical specifications.
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