International Rectifier
IRF540ZSTRRPBF
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power92W
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Technical Specifications
International Rectifier IRF540ZSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 100V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 92W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF540ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRF540ZSTRRPBF to view detailed technical specifications.
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