The IRF5803D2TR is a surface mount N-channel MOSFET with a maximum drain to source voltage of 40V and a continuous drain current of 3.4A. It has a maximum power dissipation of 2W and an on-resistance of 112mR. The device is packaged in a SOIC package and is available in quantities of 4000 per reel. The IRF5803D2TR is not RoHS compliant due to the presence of lead.
International Rectifier IRF5803D2TR technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance | 1.11nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Rds On Max | 112mR |
| RoHS Compliant | No |
| Series | FETKY™ |
| DC Rated Voltage | -40V |
| RoHS | Not Compliant |
Download the complete datasheet for International Rectifier IRF5803D2TR to view detailed technical specifications.
No datasheet is available for this part.