International Rectifier
IRF5804TRPBF
Power Field-Effect Transistor, 2.5A I(D), 40V, 0.198ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, LEAD FREE, TSOP-6
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF5804TRPBF technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 334mR |
| Drain to Source Voltage (Vdss) | 40V |
| Dual Supply Voltage | -40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 680pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 198mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | -3V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF5804TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5804TRPBF to view detailed technical specifications.
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