N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mount applications. Features a 20V drain-to-source breakdown voltage and a continuous drain current of 2.2A. Offers a low on-state resistance of 90mΩ and a gate-to-source voltage of 12V. Packaged in a compact TSOP-6, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power960mW
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Technical Specifications
International Rectifier IRF5851TRPBF technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.9mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
960mW
Mount
Surface Mount
Nominal Vgs
1.25V
On-State Resistance
90mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
960mW
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.25V
Width
1.5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF5851TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF5851TRPBF to view detailed technical specifications.
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