
N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mount applications. Features a 20V drain-to-source breakdown voltage and a continuous drain current of 2.2A. Offers a low on-state resistance of 90mΩ and a gate-to-source voltage of 12V. Packaged in a compact TSOP-6, this component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
International Rectifier IRF5851TRPBF technical specifications.
Download the complete datasheet for International Rectifier IRF5851TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
