The IRF5N5210 is a surface mount N-channel MOSFET with a continuous drain current of 31A and a gate to source voltage of 20V. It operates over a temperature range of -55°C to 150°C and has a power dissipation of 125W. The device is packaged in a bulk format and is not radiation hardened. It is not RoHS compliant.
PackageSMD/SMT
MountingSurface Mount
Power125W
Quick Jump:
Technical Specifications
International Rectifier IRF5N5210 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 31A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF5N5210 Datasheet
Download the complete datasheet for International Rectifier IRF5N5210 to view detailed technical specifications.
No datasheet is available for this part.