International Rectifier
IRF5Y540CM
Power Field-Effect Transistor, 18A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
PackageTO-257AA
MountingThrough Hole
Power75W
Quick Jump:
Technical Specifications
International Rectifier IRF5Y540CM technical specifications.
General
Package/Case
TO-257AA
Continuous Drain Current (ID)
18A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
58mR
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
Packaging
Bulk
Power Dissipation
75W
Radiation Hardening
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF5Y540CM Datasheet
Download the complete datasheet for International Rectifier IRF5Y540CM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.