N-Channel Power MOSFET featuring a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 27A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 2.45mR at a 10V gate-source voltage. Designed for surface mounting in an SOP-8 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 29ns turn-on delay and a 265ns fall time. This component is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF6201PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 265ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 8.555nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 320ns |
| Turn-On Delay Time | 29ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6201PBF Datasheet
Download the complete datasheet for International Rectifier IRF6201PBF to view detailed technical specifications.
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