P-Channel Power MOSFET, designed for demanding applications. Features a -150V drain-source voltage and a continuous drain current of -13A. Offers a low on-resistance of 290mΩ at a nominal gate-source voltage of -4V. Operates efficiently with a maximum power dissipation of 110W and a maximum operating temperature of 175°C. Packaged in a surface-mount TO-263 (D2PAK) for robust integration.
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRF6215STRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
-13A
Drain to Source Voltage (Vdss)
-150V
Drain-source On Resistance-Max
290mR
Fall Time
37ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
860pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Nominal Vgs
-4V
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
-4V
Turn-Off Delay Time
53ns
Turn-On Delay Time
14ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6215STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF6215STRLPBF to view detailed technical specifications.
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