P-Channel Power MOSFET, designed for demanding applications. Features a -150V drain-source voltage and a continuous drain current of -13A. Offers a low on-resistance of 290mΩ at a nominal gate-source voltage of -4V. Operates efficiently with a maximum power dissipation of 110W and a maximum operating temperature of 175°C. Packaged in a surface-mount TO-263 (D2PAK) for robust integration.
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRF6215STRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | -13A |
| Drain to Source Voltage (Vdss) | -150V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6215STRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF6215STRLPBF to view detailed technical specifications.
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