P-channel silicon MOSFET for small signal applications. Features 150V drain-source voltage (Vdss) and 2.2A continuous drain current (ID). Offers a maximum drain-source on-resistance of 240mΩ and a nominal gate-source voltage (Vgs) of 5V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in an SOIC surface-mount case with dimensions of 5mm (length) x 4mm (width) x 1.5mm (height).
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF6216PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 240MR |
| Dual Supply Voltage | 150V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.28nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 18ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6216PBF Datasheet
Download the complete datasheet for International Rectifier IRF6216PBF to view detailed technical specifications.
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