P-Channel Power MOSFET, TO-220AB package, featuring 150V drain-source breakdown voltage and 27A continuous drain current. Offers a maximum on-resistance of 150mΩ at a nominal gate-source voltage of -5V. This silicon, metal-oxide semiconductor FET operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 250W. Includes a 30ns fall time and 35ns turn-off delay time, with 2.21nF input capacitance. Through-hole mount, lead-free, and RoHS compliant.
PackageTO-220AB
Current Rating-27A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF6218PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
27A
Current Rating
-27A
Drain to Source Breakdown Voltage
-150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
150MR
Dual Supply Voltage
-150V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.21nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
-5V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
250W
Rds On Max
150mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
35ns
DC Rated Voltage
-150V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6218PBF Datasheet
Download the complete datasheet for International Rectifier IRF6218PBF to view detailed technical specifications.
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