International Rectifier
IRF630NL
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating9A
MountingThrough Hole
Power82W
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Technical Specifications
International Rectifier IRF630NL technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.3A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 575pF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 82W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 82W |
| Rds On Max | 300mR |
| RoHS Compliant | No |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF630NL Datasheet
Download the complete datasheet for International Rectifier IRF630NL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.