International Rectifier
IRF630NLPBF
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power82W
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Technical Specifications
International Rectifier IRF630NLPBF technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
9.3A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
300mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
575pF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
82W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
82W
Radiation Hardening
No
Rds On Max
300mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
27ns
Turn-On Delay Time
7.9ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF630NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF630NLPBF to view detailed technical specifications.
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