The IRF630NLPBF is a high-power N-channel HEXFET MOSFET with a maximum drain-to-source breakdown voltage of 200V and a continuous drain current of 9.3A. It features a low on-resistance of 300mΩ and a fast switching time with a fall time of 15ns and a turn-off delay time of 27ns. The device is packaged in a TO-262-3 package and is suitable for high-power applications. It operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power82W
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Technical Specifications
International Rectifier IRF630NLPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 300mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 575pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 7.9ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF630NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF630NLPBF to view detailed technical specifications.
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