International Rectifier
IRF630NSTRL
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageTO-263-3
Current Rating9.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF630NSTRL technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
9.3A
Current Rating
9.3A
Drain to Source Voltage (Vdss)
200V
Input Capacitance
575pF
Lead Free
Contains Lead
Max Power Dissipation
82W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Rds On Max
300mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
200V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF630NSTRL Datasheet
Download the complete datasheet for International Rectifier IRF630NSTRL to view detailed technical specifications.
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