N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.15-ohm drain-source on-resistance and is housed in a TO-220AB package for through-hole mounting. Maximum power dissipation is rated at 150W, with operating temperatures ranging from -55°C to 175°C. Key electrical characteristics include a 20V gate-to-source voltage and 1.16nF input capacitance.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF640NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
150mR
Dual Supply Voltage
200V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.16nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF640NPBF Datasheet
Download the complete datasheet for International Rectifier IRF640NPBF to view detailed technical specifications.
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