N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.15-ohm drain-source on-resistance and is housed in a TO-220AB package for through-hole mounting. Maximum power dissipation is rated at 150W, with operating temperatures ranging from -55°C to 175°C. Key electrical characteristics include a 20V gate-to-source voltage and 1.16nF input capacitance.
PackageTO-220AB
Current Rating18A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF640NPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.16nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF640NPBF Datasheet
Download the complete datasheet for International Rectifier IRF640NPBF to view detailed technical specifications.
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