International Rectifier
IRF640NS
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3
PackageD2PAK
Current Rating18A
MountingSurface Mount
Power150W
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Technical Specifications
International Rectifier IRF640NS technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
150mR
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Packaging
Bulk
Power Dissipation
150W
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
10ns
DC Rated Voltage
200V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF640NS Datasheet
Download the complete datasheet for International Rectifier IRF640NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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