International Rectifier
IRF640NS
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3
PackageD2PAK
Current Rating18A
MountingSurface Mount
Power150W
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Technical Specifications
International Rectifier IRF640NS technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 150mR |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF640NS Datasheet
Download the complete datasheet for International Rectifier IRF640NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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