The IRF6601 is a surface mount N-channel MOSFET with a maximum drain to source voltage of 100V and a continuous drain current of 31A. It is packaged in a TO-251-3 case and is rated for a maximum power dissipation of 3W. The device is RoHS compliant and has a maximum on-resistance of 39 milliohms. It can be mounted using surface mount or through hole techniques and is available in a cut tape packaging format.
PackageTO-251-3
Current Rating26A
MountingSurface Mount, Through Hole
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Technical Specifications
International Rectifier IRF6601 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 26A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 1.69nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3W |
| Mount | Surface Mount, Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6601 Datasheet
Download the complete datasheet for International Rectifier IRF6601 to view detailed technical specifications.
No datasheet is available for this part.