N-channel MOSFET transistor featuring a 30V drain-to-source breakdown voltage and a continuous drain current of 27A. Offers a low on-resistance of 3.4mR (max) and 5.5mR (drain to source). Designed for surface mounting with a compact 5.45mm x 5.05mm x 0.6mm DirectFET MT package. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 71ns. Operates within a temperature range of -40°C to 150°C.
Current Rating25A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6603 technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 71ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 6.59nF |
| Lead Free | Contains Lead |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 30V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6603 Datasheet
Download the complete datasheet for International Rectifier IRF6603 to view detailed technical specifications.
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