N-channel MOSFET transistor featuring a 30V drain-to-source breakdown voltage and a continuous drain current of 27A. Offers a low on-resistance of 3.4mR (max) and 5.5mR (drain to source). Designed for surface mounting with a compact 5.45mm x 5.05mm x 0.6mm DirectFET MT package. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 71ns. Operates within a temperature range of -40°C to 150°C.
Current Rating25A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6603 technical specifications.
General
Continuous Drain Current (ID)
27A
Current Rating
25A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
71ns
Gate to Source Voltage (Vgs)
12V
Height
0.6mm
Input Capacitance
6.59nF
Lead Free
Contains Lead
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
3.4mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
24ns
Turn-On Delay Time
20ns
DC Rated Voltage
30V
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6603 Datasheet
Download the complete datasheet for International Rectifier IRF6603 to view detailed technical specifications.
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