N-channel power MOSFET featuring 30V drain-source breakdown voltage and 27A continuous drain current. Offers low 3.4mΩ drain-source on-resistance at a nominal gate-source voltage of 2.5V. Designed for surface mount applications with a maximum power dissipation of 3.6W and operating temperature range of -40°C to 150°C. Includes a turn-off delay time of 24ns and reverse recovery time of 45ns. Packaged in tape and reel for high-volume production.
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6603TR1 technical specifications.
General
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.4mR
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.59nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
2.5V
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
3.4mR
Reach SVHC Compliant
No
Reverse Recovery Time
45ns
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
24ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6603TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6603TR1 to view detailed technical specifications.
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