N-channel power MOSFET featuring 30V drain-source breakdown voltage and 27A continuous drain current. Offers low 3.4mΩ drain-source on-resistance at a nominal gate-source voltage of 2.5V. Designed for surface mount applications with a maximum power dissipation of 3.6W and operating temperature range of -40°C to 150°C. Includes a turn-off delay time of 24ns and reverse recovery time of 45ns. Packaged in tape and reel for high-volume production.
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6603TR1 technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.59nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 45ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6603TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6603TR1 to view detailed technical specifications.
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