International Rectifier
IRF6607
Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6607 technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6.93nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6607 Datasheet
Download the complete datasheet for International Rectifier IRF6607 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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