N-channel power MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low 9mΩ Rds(on) for efficient power switching. Designed for surface mount applications with a compact 3.95mm x 3.95mm x 0.62mm footprint. Operates across a wide temperature range from -40°C to 150°C, with a maximum power dissipation of 42W. RoHS compliant and lead-free.
Current Rating55A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6608 technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Current Rating | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.62mm |
| Input Capacitance | 2.12nF |
| Lead Free | Lead Free |
| Length | 3.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 30V |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6608 Datasheet
Download the complete datasheet for International Rectifier IRF6608 to view detailed technical specifications.
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