N-channel power MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low 9mΩ Rds(on) for efficient power switching. Designed for surface mount applications with a compact 3.95mm x 3.95mm x 0.62mm footprint. Operates across a wide temperature range from -40°C to 150°C, with a maximum power dissipation of 42W. RoHS compliant and lead-free.
Current Rating55A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6608 technical specifications.
General
Continuous Drain Current (ID)
13A
Current Rating
55A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
30V
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
12V
Height
0.62mm
Input Capacitance
2.12nF
Lead Free
Lead Free
Length
3.95mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
13ns
DC Rated Voltage
30V
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6608 Datasheet
Download the complete datasheet for International Rectifier IRF6608 to view detailed technical specifications.
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