MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRF6608TR1 technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.12nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF6608TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6608TR1 to view detailed technical specifications.
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