N-channel power MOSFET featuring 20V drain-source breakdown voltage and 31A continuous drain current. Offers low 2.6mΩ drain-source resistance at VGS=10V, 5A. Designed for surface mount applications with a 7-pin Direct-FET package, providing 89W power dissipation. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 9.8ns. RoHS compliant and lead-free.
Current Rating31A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
Quick Jump:
Technical Specifications
International Rectifier IRF6609TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6609TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6609TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
