International Rectifier
IRF6610TRPBF
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6610TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 10.7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.52nF |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6610TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6610TRPBF to view detailed technical specifications.
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