N-channel MOSFET transistor with 30V drain-source breakdown voltage and 24A continuous drain current. Features low 3.3mR maximum drain-source on-resistance at 1.8V nominal gate-source voltage. Surface mountable in a 7-pin Direct-FET MX package, offering fast switching with 4.8ns fall time, 15ns turn-on delay, and 21ns turn-off delay. Operates from -40°C to 150°C with a maximum power dissipation of 2.8W.
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6612TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.3MR |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 3.97nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 15ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6612TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6612TR1PBF to view detailed technical specifications.
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