N-Channel Power MOSFET, 40V Vds, 23A Continuous Drain Current, 3.4mΩ Rds On. Features 150A current rating, 2.8W max power dissipation, and 150°C max operating temperature. Surface mount design with 4.9ns fall time and 27ns turn-off delay. RoHS compliant and lead-free.
Current Rating150A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6613TR1 technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Current Rating | 150A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.4R |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6613TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6613TR1 to view detailed technical specifications.
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