N-Channel Power MOSFET, 40V Vds, 23A Continuous Drain Current, 3.4mΩ Rds On. Features 150A current rating, 2.8W max power dissipation, and 150°C max operating temperature. Surface mount design with 4.9ns fall time and 27ns turn-off delay. RoHS compliant and lead-free.
Current Rating150A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6613TR1 technical specifications.
General
Continuous Drain Current (ID)
23A
Current Rating
150A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
3.4R
Drain to Source Voltage (Vdss)
40V
Fall Time
4.9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.95nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
3.4mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
27ns
DC Rated Voltage
40V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6613TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6613TR1 to view detailed technical specifications.
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