N-Channel MOSFET, 40V Drain-Source Voltage, 23A Continuous Drain Current. Features low 3.4mΩ Max Drain-Source On-Resistance and 4.9ns Fall Time. Operates with a 20V Gate-Source Voltage and 1.35V Threshold Voltage. Surface mount package with 5.45mm length, 5.05mm width, and 0.6mm height. RoHS compliant with a max operating temperature of 150°C.
Current Rating23A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
Quick Jump:
Technical Specifications
International Rectifier IRF6613TR1PBF technical specifications.
General
Continuous Drain Current (ID)
23A
Current Rating
23A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4.1mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
3.4MR
Dual Supply Voltage
40V
Fall Time
4.9ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
5.95nF
Lead Free
Lead Free
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.35V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
3.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.35V
Turn-Off Delay Time
27ns
Turn-On Delay Time
18ns
DC Rated Voltage
40V
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6613TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6613TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
