
N-Channel MOSFET, 40V Drain-Source Voltage, 23A Continuous Drain Current. Features low 3.4mΩ Max Drain-Source On-Resistance and 4.9ns Fall Time. Operates with a 20V Gate-Source Voltage and 1.35V Threshold Voltage. Surface mount package with 5.45mm length, 5.05mm width, and 0.6mm height. RoHS compliant with a max operating temperature of 150°C.
International Rectifier IRF6613TR1PBF technical specifications.
| Continuous Drain Current (ID) | 23A |
| Current Rating | 23A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.4MR |
| Dual Supply Voltage | 40V |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 5.95nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.35V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.35V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 40V |
| Width | 5.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF6613TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
