N-channel MOSFET featuring 30V drain-source breakdown voltage and 14A continuous drain current. Offers low 8.1mΩ drain-source resistance at a nominal gate-source voltage of 2.35V. Designed for surface mount applications with a maximum power dissipation of 2.1W and operating temperature range of -40°C to 150°C. Includes a reverse recovery time of 16ns and turn-off delay of 12ns.
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRF6617TR1 technical specifications.
General
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8.1mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
2.35V
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
8.1mR
Reach SVHC Compliant
No
Reverse Recovery Time
16ns
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
12ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6617TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6617TR1 to view detailed technical specifications.
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