N-channel MOSFET featuring 30V drain-source breakdown voltage and 14A continuous drain current. Offers low 8.1mΩ drain-source resistance at a nominal gate-source voltage of 2.35V. Designed for surface mount applications with a maximum power dissipation of 2.1W and operating temperature range of -40°C to 150°C. Includes a reverse recovery time of 16ns and turn-off delay of 12ns.
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRF6617TR1 technical specifications.
General
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 2.35V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 8.1mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 16ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6617TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6617TR1 to view detailed technical specifications.
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