N-channel MOSFET featuring 30V drain-source breakdown voltage and 14A continuous drain current. Offers low 8.1mΩ drain-source resistance at a nominal gate-source voltage of 2.35V. Designed for surface mount applications with a maximum power dissipation of 2.1W and operating temperature range of -40°C to 150°C. Includes a reverse recovery time of 16ns and turn-off delay of 12ns.
International Rectifier IRF6617TR1 technical specifications.
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