N-Channel MOSFET, 30V Drain-Source Voltage, 30A Continuous Drain Current. Features low 2.2mΩ maximum Drain-Source On-Resistance. Operates with a nominal Gate-Source Voltage of 1.64V and a maximum of 20V. Offers fast switching with an 8.1ns fall time, 21ns turn-on delay, and 27ns turn-off delay. Surface mountable in a compact 6.35mm x 5.05mm x 0.506mm package. RoHS compliant with a maximum power dissipation of 2.8W.
Current Rating30A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6618TR1PBF technical specifications.
General
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.4mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
2.2MR
Fall Time
8.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
5.64nF
Lead Free
Lead Free
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.64V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
2.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
27ns
Turn-On Delay Time
21ns
DC Rated Voltage
30V
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6618TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6618TR1PBF to view detailed technical specifications.
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