International Rectifier
IRF6619
Power Field-Effect Transistor, 30A I(D), 20V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-2
Current Rating30A
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6619 technical specifications.
General
Continuous Drain Current (ID)
30A
Current Rating
30A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
1.65R
Fall Time
9.3ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
RoHS Compliant
Yes
Turn-Off Delay Time
25ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6619 Datasheet
Download the complete datasheet for International Rectifier IRF6619 to view detailed technical specifications.
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