N-channel MOSFET with 20V drain-source breakdown voltage and 27A continuous drain current. Features low 2.7mR drain-source on-resistance at a nominal Vgs of 2.45V. Operates from -40°C to 150°C with a maximum power dissipation of 89W. This surface-mount component is packaged in tape and reel, offering fast switching speeds with turn-on delay of 18ns and fall time of 6.6ns.
Current Rating27A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6620TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Current Rating | 27A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 2.7MR |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 4.13nF |
| Lead Free | Lead Free |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 2.45V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 20V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6620TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6620TR1PBF to view detailed technical specifications.
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