N-channel power MOSFET featuring 30V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance of 9.1mΩ at a nominal gate-source voltage of 1.8V. This silicon Metal-oxide Semiconductor FET boasts a fast fall time of 4.1ns and turn-off delay of 16ns, with a maximum power dissipation of 2.2W. Designed for surface mounting with tape and reel packaging, operating across a temperature range of -40°C to 150°C.
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6621TR1 technical specifications.
General
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
4.1ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.46nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Rds On Max
9.1mR
Reach SVHC Compliant
No
Reverse Recovery Time
9.8ns
RoHS Compliant
No
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.8V
Turn-Off Delay Time
16ns
DC Rated Voltage
30V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF6621TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6621TR1 to view detailed technical specifications.
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