N-channel power MOSFET featuring 30V drain-source breakdown voltage and 12A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 9.1mΩ drain-source on-resistance at a nominal 1.8V gate-source voltage. Designed for surface mounting, it operates within a temperature range of -40°C to 150°C with a maximum power dissipation of 42W. Key switching characteristics include a 4.1ns fall time, 12ns turn-on delay, and 16ns turn-off delay.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6621TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.46nF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 9.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 12ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6621TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6621TR1PBF to view detailed technical specifications.
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