International Rectifier
IRF6621TRPBF
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6621TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 9.1mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6621TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6621TRPBF to view detailed technical specifications.
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