N-Channel Power MOSFET, 20V Vds, 16A continuous drain current, and 5.7mΩ Rds On. Features 1.36nF input capacitance, 2.2V nominal Vgs, and 12ns turn-off delay. Surface mountable in a 3.95mm width package, operating from -40°C to 150°C with 1.4W max power dissipation. RoHS compliant and supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
International Rectifier IRF6623TR1 technical specifications.
General
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
20V
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.36nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
2.2V
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
5.7mR
Reach SVHC Compliant
No
Reverse Recovery Time
20ns
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.2V
Turn-Off Delay Time
12ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6623TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6623TR1 to view detailed technical specifications.
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