N-Channel Power MOSFET, 20V Vds, 16A continuous drain current, and 5.7mΩ Rds On. Features 1.36nF input capacitance, 2.2V nominal Vgs, and 12ns turn-off delay. Surface mountable in a 3.95mm width package, operating from -40°C to 150°C with 1.4W max power dissipation. RoHS compliant and supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
International Rectifier IRF6623TR1 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.36nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 20ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 12ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6623TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6623TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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