N-channel power MOSFET with 20V drain-source breakdown voltage and 16A continuous drain current. Features 5.7mΩ maximum drain-source on-resistance at a nominal 2.2V gate-source voltage. Offers a 1.4W maximum power dissipation and operates within a temperature range of -40°C to 150°C. This surface-mount device includes a 1.36nF input capacitance and is supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
International Rectifier IRF6623TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 9.7mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 5.7MR |
| Dual Supply Voltage | 20V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.36nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 9.7ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6623TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6623TR1PBF to view detailed technical specifications.
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