N-Channel MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance of 7.8mR (max) and 10.8mR (typical) at a nominal Vgs of 1.8V. Designed for surface mount applications with a compact 4.85mm x 4.85mm x 0.506mm package. Includes fast switching characteristics with fall time of 4.9ns, turn-on delay of 15ns, and turn-off delay of 18ns. Maximum power dissipation rated at 42W, operating from -40°C to 150°C.
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6631TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.45nF |
| Lead Free | Lead Free |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 7.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6631TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6631TR1PBF to view detailed technical specifications.
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