N-Channel MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance of 7.8mR (max) and 10.8mR (typical) at a nominal Vgs of 1.8V. Designed for surface mount applications with a compact 4.85mm x 4.85mm x 0.506mm package. Includes fast switching characteristics with fall time of 4.9ns, turn-on delay of 15ns, and turn-off delay of 18ns. Maximum power dissipation rated at 42W, operating from -40°C to 150°C.
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6631TR1PBF technical specifications.
General
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
4.9ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
1.45nF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
42W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
7.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
15ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6631TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6631TR1PBF to view detailed technical specifications.
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